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Date: 26 July 2017
200-volt MOSFETs tout best-in-class RDS, FOM  
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200-volt MOSFETs tout best-in-class RDS, FOM

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Product Description

South Portland, Maine—Fairchild Semiconductor's 100-, 200- and 220-volt n-channel UltraFET devices for primary-side switches in isolated DC/DC converter applications tout best-in-class performance.
"Fairchild now offers designers ultra-compact MLP 3x3 power switches with industry-leading performance," said Mike Speed, market development manager, communications. "We've combined the advantages of our PowerTrench process and advanced packaging technology to enhance Fairchild's UltraFET portfolio. These products are especially tailored to meet demanding design challenges posed by today's DC/DC converter applications."
The FDMC2610 200-volt device, for instance, boasts the industry's lowest Miller charge (3.6 vs. 4 nC) and the lowest on-resistance (200 vs. 240 milliohms) when compared with similar 200-volt MLP 3-by-3 mm devices on the market. These characteristics result in a 27 percent better figure of merit (FOM). This device also offers best-in-class thermal resistance (θJC) compared with similarly packaged devices (3 vs. 25 °C/W). In addition, it takes half the board space of competing SO-8-packaged devices.
Complementing these three n-channel devices, the company has also introduced a 150-volt p-channel planar UltraFET device, which is also available in an MLP 3x3. This device option offers designers a complete solution for their active-clamp switch topologies requiring both n- and p-channel MOSFETs.
These lead (Pb)-free devices meet or exceed the requirements of the joint IPC/JEDEC standard J-STD-020C and are compliant with European Union regulations now in effect. Click here, here, here, and here for additional information. Samples and a demo board are available now. Delivery is 8 weeks ARO

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